IC 28nm CMOS28FDSOI
STMicroelectronics
Advanced CMOS FDSOI technology with 8 metal layers
Advanced CMOS FDSOI technology with 8 metal layers
Next run: 2019/10/15
IC 55nm BiCMOS055
STMicroelectronics
BiCMOS SiGe technology with 8 metal layers
BiCMOS SiGe technology with 8 metal layers
Next run: 2019/08/19
IC 65nm CMOS065
STMicroelectronics
Advanced CMOS technology with 7 metal layers
Advanced CMOS technology with 7 metal layers
Next run: 2019/09/30
IC 130nm BiCMOS9MW
STMicroelectronics
BiCMOS SiGe technology with 6 metal layers
BiCMOS SiGe technology with 6 metal layers
Next run: 2019/06/03
IC 130nm H9SOI-FEM
STMicroelectronics
Advanced CMOS SOI technology with 4 metal layers
Advanced CMOS SOI technology with 4 metal layers
Next run: 2019/04/29
IC 130nm HCMOS9A
STMicroelectronics
CMOS High Voltage technology with 4 metal layers
CMOS High Voltage technology with 4 metal layers
Next run: 2019/11/07
IC 0.16µm BCD8sP
STMicroelectronics
BCD High Voltage technology with 4 metal layers
BCD High Voltage technology with 4 metal layers
Next run: 2019/10/02
IC 0.16µm BCD8s-SOI
STMicroelectronics
BCD SOI High Voltage technology with 4 metal layers
BCD SOI High Voltage technology with 4 metal layers
Next run: 2019/10/02
IC 0.35µm BARC C35B4OA
ams
CMOS Opto BARC technology with 4 metal layers, for Provides enhanced optical sensitivity for embedded photodiodes and high density CMOS camera products.
CMOS Opto BARC technology with 4 metal layers, for Provides enhanced optical sensitivity for embedded photodiodes and high density CMOS camera products.
Next run: 2019/05/13
IC 0.35µm C35B4C3
ams
CMOS technology with 4 metal layers, for Mixed signal analog digital, large digital designs, system on chip
CMOS technology with 4 metal layers, for Mixed signal analog digital, large digital designs, system on chip
Next run: 2019/05/13
IC 0.35µm ARC C35B4O1
ams
CMOS Opto ARC technology with 4 metal layers, for Provides enhanced optical sensitivity for embedded photodiodes and high density CMOS camera products.
CMOS Opto ARC technology with 4 metal layers, for Provides enhanced optical sensitivity for embedded photodiodes and high density CMOS camera products.
Next run: 2019/05/13
IC 0.35µm RF C35B4M3
ams
CMOS RF technology with 4 metal layers, for Mixed signal analog digital, large digital designs, system on chip, RF.
CMOS RF technology with 4 metal layers, for Mixed signal analog digital, large digital designs, system on chip, RF.
Next run: 2019/10/14
IC 0.35µm H35B4D3
ams
CMOS High Voltage technology with 4 metal layers, for Mixed signal analog digital, HV designs, system on chip
CMOS High Voltage technology with 4 metal layers, for Mixed signal analog digital, HV designs, system on chip
Next run: 2019/09/30
IC 0.35µm C35B4E3
ams
CMOS technology with 4 metal layers, for The process is fully compatible with C35B4C3 Mixed signal analog digital, large digital designs, system on chip
CMOS technology with 4 metal layers, for The process is fully compatible with C35B4C3 Mixed signal analog digital, large digital designs, system on chip
IC 0.35µm S35D4M5
ams
BiCMOS SiGe technology with 4 metal layers, for Mixed signal analog/RF/digital, large digital designs, system on chip
BiCMOS SiGe technology with 4 metal layers, for Mixed signal analog/RF/digital, large digital designs, system on chip
Next run: 2019/10/14
MEMS Specific MEMS technologies PolyMUMPs
MEMSCAP
MEMS MUMPS, for MEMS, micromechanics, MOEMS.
MEMS MUMPS, for MEMS, micromechanics, MOEMS.
Next run: 2019/07/09
MEMS Specific MEMS technologies SOIMUMPs
MEMSCAP
MEMS MUMPS, for MEMS, micromechanics, MOEMS
MEMS MUMPS, for MEMS, micromechanics, MOEMS
Next run: 2019/06/04
MEMS Specific MEMS technologies PiezoMUMPs
MEMSCAP
MEMS PiezoMUMPS, for MEMS, micromechanics, MOEMS
MEMS PiezoMUMPS, for MEMS, micromechanics, MOEMS
Next run: 2019/05/21
MEMS Bulk Micromachining Frontside Bulk Micromachining
ams
CMOS FS Bulk Micromachining technology with 4 metal layers, for MEMS, micromechanics, MOEMS.
CMOS FS Bulk Micromachining technology with 4 metal layers, for MEMS, micromechanics, MOEMS.
MEMS Bulk Micromachining Backside Bulk Micromachining
ams
CMOS BS Bulk Micromachining technology with 4 metal layers
CMOS BS Bulk Micromachining technology with 4 metal layers
MEMS TDSI MIDIS TM MIDIS
TELEDYNE DALSA
MEMS, for Accelerometers Gyroscopes Resonators Inertial sensor combos (Sensor fusion)
MEMS, for Accelerometers Gyroscopes Resonators Inertial sensor combos (Sensor fusion)
OPEN 3D Frontside UBM post-process
IRT Nanoelec/LETI-CEA
Wafer-level packaging, for 3D/2.5D integration
Wafer-level packaging, for 3D/2.5D integration
OPEN 3D Frontside Micro-Bumps post-process
IRT Nanoelec/LETI-CEA
Wafer-level packaging, for 3D/2.5D integration
Wafer-level packaging, for 3D/2.5D integration
OPEN 3D Frontside Bumps post-process
IRT Nanoelec/LETI-CEA
Wafer-level packaging Flip-Chip Packaging, for Single die flip-chip, 3D/2.5D integration
Wafer-level packaging Flip-Chip Packaging, for Single die flip-chip, 3D/2.5D integration
OPEN 3D Backside post-process (TSV, RDL & Bumps)
IRT Nanoelec/LETI-CEA
Wafer-level packaging, for 3D/2.5D integration
Wafer-level packaging, for 3D/2.5D integration
Passive Silicon Interposer with UBM
ams
Si-Interposer technology with 4 metal layers, for Passive Silicon Si-Interposer for 3D/2.5D integration
Si-Interposer technology with 4 metal layers, for Passive Silicon Si-Interposer for 3D/2.5D integration
Silicon Photonic IC Si310-PHMP2M
IRT Nanoelec/LETI-CEA
Silicon Photonic technology with 2 metal layers, for Telecom, DataCom, ComputerCom
Silicon Photonic technology with 2 metal layers, for Telecom, DataCom, ComputerCom
Next run: 2019/10/30
0.35µm Active Silicon Interposer with UBM
ams
Si-Interposer technology with 4 metal layers, for Active Silicon Si-Interposer for 3D/2.5D integration
Si-Interposer technology with 4 metal layers, for Active Silicon Si-Interposer for 3D/2.5D integration
Solder bumping post process
IRT Nanoelec/LETI-CEA
Flip-Chip Packaging Wafer-level packaging, for Flip-chip packaging
Flip-Chip Packaging Wafer-level packaging, for Flip-chip packaging
OPEN 3D Frontside Micro-Bumps post-process
IRT Nanoelec/LETI-CEA
Flip-Chip Packaging, for 3D/2.5D integration
Flip-Chip Packaging, for 3D/2.5D integration
MAD200 Memory Advanced Demonstrator 200mm
IRT Nanoelec/LETI-CEA
CMOS NVM, for Storage Class memory, Embedded memory, Neuromorphic, Computing, Artificial Intelligence accelerator.
CMOS NVM, for Storage Class memory, Embedded memory, Neuromorphic, Computing, Artificial Intelligence accelerator.
Next run: 2019/06/15
STMicroelectronics Wafer-level bumping on 300mm, ST 55nm BiCMOS055, ST 65nm CMOS065 and on ST 28nm CMOS28FDSOI processes
STMicroelectronics
Wafer-level packaging, for Single die flip-chip packaging
Wafer-level packaging, for Single die flip-chip packaging
IC ON Semiconductor 0.18µm CMOS ONC18MS
ON Semiconductor
CMOS technology with 5 metal layers, for Platform for highly integrated high voltage mixed signal processes ideal for many automotive, industrial, medical and defense applications
CMOS technology with 5 metal layers, for Platform for highly integrated high voltage mixed signal processes ideal for many automotive, industrial, medical and defense applications
IC ON Semiconductor 0.18µm CMOS/HV ONC18I4T
ON Semiconductor
CMOS high Voltage technology with 5 metal layers, for Uniquely suitable for high-voltage automotive applications thanks to Deep Trench Isolation (DTI)
Also serves as a platform for highly integrated high voltage mixed signal processes ideal for many industrial applications.
CMOS high Voltage technology with 5 metal layers, for Uniquely suitable for high-voltage automotive applications thanks to Deep Trench Isolation (DTI)
Also serves as a platform for highly integrated high voltage mixed signal processes ideal for many industrial applications.
IC ON Semiconductor 0.35µm CMOS ONC35U
ON Semiconductor
CMOS technology with 4 metal layers, for Mixed signal designs requiring a moderate amount of digital logic (up to 250k gates)
CMOS technology with 4 metal layers, for Mixed signal designs requiring a moderate amount of digital logic (up to 250k gates)
IC ON Semiconductor 0.35µm CMOS/HV ONC35I3T25U
ON Semiconductor
CMOS High Voltage technology with 4 metal layers, for Answer to the need for increased digital content in a mixed signal and/or high voltage environment -* 3 and 5 metal layers options (thick top metal) -* Additional options on request: HIPO, MiM capacitor, Epi
CMOS High Voltage technology with 4 metal layers, for Answer to the need for increased digital content in a mixed signal and/or high voltage environment -* 3 and 5 metal layers options (thick top metal) -* Additional options on request: HIPO, MiM capacitor, Epi
IC ON Semiconductor 0.35µm CMOS/HV ONC35I3T50U
ON Semiconductor
BCD High Voltage technology with 4 metal layers, for Answer to the need for increased digital content in a mixed signal and/or high voltage environment
BCD High Voltage technology with 4 metal layers, for Answer to the need for increased digital content in a mixed signal and/or high voltage environment
- 3 and 5 metal layers options (thick top metal)
- Additional options on request: MiM capacitor, HIPO, Polyimide
