IRT Nanoelec CEA-LETI

IC Si3N4-800

Next run : 2021-12-06

TECHNOLOGY CHARACTERISTICS:

CEA-Leti Ultra-Low Loss LPCVD SiN Photonics platform

CEA-Leti Ultra-Low Loss SiN photonics platform is based on a high quality LPCVD Si3N4 layer. This platform is serving energy-efficient nonlinear photonics and quantum optics. This technology shows very high cross-wafer device performance uniformities, low thermal susceptibility, and high power damage thresholds.

This platform enables the fabrication and testing of high-confinement, ultralow-loss silicon nitride waveguides and resonators showing average attenuation coefficients as low as ∼3 dB/m across the S-, C-, and L bands for 1.6-µm-width × 800-nm-height dimensions, with intrinsic quality factors approaching ∼107 in the C band.

Main features:

  • 800nm High Quality LPCVD Si3N4
  • 200nm standard smallest feature size
  • Deep trench for edge coupler

    APPLICATION AREA:

    • Communication: ground and space communication, quantum cryptography for cybersecurity
    • Computing: quantum computing
    • Optical sensing: biosensing, biomicroscopy and 3D sensing such as LIDAR

    FRONTEND BACKEND TOOLS:

    Cadence IC 6.1.7 (DK version 2019.4 – Mar.-20)

    SIMULATION TOOLS:

    Eldo (Mentor Graphics)

    VERIFICATION TOOLS:

    Calibre (Mentor Graphics)

    PRICE

    STANDARD price in Euro
    960/mm2
    Minimum charge area: 10mm2

    EP DISCOUNT price in Euro
    (applied to EUROPRACTICE MEMBERS registered)
    860/mm2
    Minimum charge area: 10mm2

    CONTACT 


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    DOCUMENTATION

    Publication:

    Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators
    by H. El Dirani et al., Optics Express 27, 30726 (2019)