IRT Nanoelec CEA-LETI

IC Si-220

Next run : 2021-12-01

TECHNOLOGY CHARACTERISTICS:

CEA-LETI Si-220 Passive Photonics platform

CEA-Leti’s Silicon photonics platform allows miniaturization, power efficiency, cost reduction and scalability of photonic integrated circuits (PIC).

Pioneering silicon photonics for more than 15 years, CEA-Leti has designed a technology toolbox featuring state-of-the-art performance for communication, computing and optical sensing.

CEA-Leti’s Silicon photonics platform offers a broad range of processes on 300 mm wafers that leverage world-class pre-industrialization equipment. CEA-Leti’s fabrication platform enables large-scale integration of passive and active devices in a flexible CMOS compatible process.

Main features:

  • 300 mm high uniformity SOI substrate with 220 nm Si
  • Metal heater
  • One-level metal interconnect
  • Deep trench for edge coupler

Available option:

  • Open 3D Post-processes: UBM, Bumps & µ-Bumps

Device library including:

  • 1D & 2D grating couplers
  • Waveguides (strip, rib, deep rib) with or without heater
  • Bend waveguides (90°, 45°, s-)
  • Transitions (singlemode to multimode)
  • Directional couplers (50%, 90%, 98%)
  • MMI (1×2, 2×2)
  • Racetrack resonator

    APPLICATION AREA:

    • Communication: Telecom, Datacom, 5G infrastructures, quantum cryptography for cybersecurity
    • Computing: Computer communication for High Performance Computing (HPC), quantum computing and neuromorphic computing for AI
    • Optical sensing: Gas sensing, structural health monitoring and 3D sensing such as LIDAR

    FRONTEND BACKEND TOOLS:

    Cadence IC 6.1.7 (DK version 2019.4 – Mar.-20)

    SIMULATION TOOLS:

    Eldo (Mentor Graphics)

    VERIFICATION TOOLS:

    Calibre (Mentor Graphics)

    PRICE

    STANDARD price in Euro
    760/mm2
    Minimum charge area: 10mm2

    EP DISCOUNT price in Euro
    (applied to EUROPRACTICE MEMBERS registered)
    680/mm2
    Minimum charge area: 10mm2

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