SiN-Photonics IC Si3N4-800

IC IRT Nanoelec/CEA-LETI Silicon-Nitride Photonics technology

TECHNOLOGY CHARACTERISTICS:

CEA-LETI Ultra-Low Loss LPCVD SiN Photonics platform

CEA-Leti’s Ultra-Low Loss SiN photonics platform is based on a high quality LPCVD Si3N4 layer. This platform is serving energy-efficient nonlinear photonics and quantum optics. This technology shows very high cross-wafer device performance uniformities, low thermal susceptibility, and high power damage thresholds.

This platform enables the fabrication and testing of high-confinement, ultralow-loss silicon nitride waveguides and resonators showing average attenuation coefficients as low as ∼3 dB/m across the S-, C-, and L bands for 1.6-µm-width × 800-nm-height dimensions, with intrinsic quality factors approaching ∼107 in the C band.

Main features:

  • 800nm High Quality LPCVD Si3N4
  • 200nm standard smallest feature size
  • Deep trench for edge coupler

APPLICATION AREA:

  • Communication: ground and space communication, quantum cryptography for cybersecurity
  • Computing: quantum computing
  • Optical sensing: biosensing, biomicroscopy and 3D sensing such as LIDAR

FRONTEND BACKEND TOOLS:

Cadence IC 6.1.7 (DK version 2019.4 – Mar.-20)

SIMULATION TOOLS:

Eldo (Mentor Graphics)

VERIFICATION TOOLS:

Calibre (Mentor Graphics)