Silicon Photonic ICs Si310-PHMP2M

IC IRT Nanoelec/LETI-CEA Si-Photonics 2 ML Si310-PHMP2M

TECHNOLOGY CHARACTERISTICS :

200mm SOI platform with 300nm Si and 800nm buried oxide
Multilevel patterning to define various silicon heights of 0, 65, 165 and 300nm
2 metal layers

Passive structures

• 1D & 2D Grating couplers
• Shallow, deep ring and strip waveguides & bends

Active structures

• Lateral Ge PIN photodiode
• MZ and RR Modulators
• Multimode interferometers
• TiTiN Metal heater

Introduction to Silicon Photonic ICs Si310-PHMP2M video

Introduction to Silicon Photonic ICs Si310-PHMP2M video

SPECIAL FEATURES :

Available post process option (UBM, bumps & micro-bumps deposition)

APPLICATION AREA :

Telecom, DataCom, ComputerCom

DESIGN KIT VERSION :

2017.2

Frontend Backend tools :

Cadence IC 6.1.5, Phoenix Software, Mentor Graphics Pyxis 15.5.5

Simulation tools :

Eldo

Verification tools :

DRC calibre

TURNAROUND TIME :

Typical leadtime: 32 weeks