Silicon Photonic IC Si310-PHMP2M

IC IRT Nanoelec/LETI-CEA Silicon Photonic 2 ML Si310-PHMP2M

TECHNOLOGY CHARACTERISTICS :

200mm SOI platform with 300nm Si and 800nm buried oxide
Multilevel patterning to define various silicon heights of 0, 65, 165 and 300nm
2 metal layers

Passive structures

1D & 2D Grating couplers
Shallow, deep rib and strip waveguides & bends

Active structures

Lateral Ge PIN photodiode
MZ and RR Modulators
Multimode interferometers
TiTiN Metal heater

Introduction to Silicon Photonic ICs Si310-PHMP2M video

SPECIAL FEATURES :

Available post process option (UBM, bumps & micro-bumps deposition)

APPLICATION AREA :

Telecom, DataCom, ComputerCom

DESIGN KIT VERSION :

2017.2

Frontend Backend tools :

Cadence IC 6.1.5, Phoenix Software, Mentor Graphics Pyxis 15.5.5

Simulation tools :

Eldo

Verification tools :

DRC calibre

TURNAROUND TIME :

Typical leadtime: 32 weeks

Next run: 2019/10/30

PRICE :

STANDARD price in Euro
1600/mm²
Charged Area = multiples of 2mm² blocks including scribe-line.
Each block is multiple 1 x 2 mm² and/or 2 x 1 mm².
Price for Area> 10mm² with minimum charge of 2 blocks or 4 mm².
16000 + (900/mm²)/mm²
Charged Area = multiples of 2mm² blocks including scribe-line. Each block is multiple 1 x 2 mm² and/or 2 x 1 mm².
Price for additional blocks above 10mm² with minimum charge of 16000Euro.
EP DISCOUNT price in Euro/project
(applied to NEXTS/Europractice registered)
700.