Si-Photonics IC Si310-PHMP2M

IC IRT Nanoelec/LETI-CEA Silicon Photonics 2 ML Si310-PHMP2M

TECHNOLOGY CHARACTERISTICS :

200mm SOI platform with 300nm Si and 800nm buried oxide
Multilevel patterning to define various silicon heights of 0, 65, 165 and 300nm
2 metal layers

Passive structures

  • 1D & 2D Grating couplers
  • Shallow, deep rib and strip waveguides & bends

Active structures

  • Lateral Ge PIN photodiode
  • MZ and RR Modulators
  • Multimode interferometers
  • TiTiN Metal heater

Introduction to Silicon Photonic ICs Si310-PHMP2M video

SPECIAL FEATURES :

Available post process option (UBM, bumps & micro-bumps deposition)

APPLICATION AREA :

Telecom, DataCom, ComputerCom

Frontend Backend tools :

  • Cadence IC 6.1.7 DK version 2019.4
  • Synopsis OptoDesigner DK version 2019.3.10.1

Simulation tools :

Eldo (Mentor Graphics)

Verification tools :

Calibre (Mentor Graphics)

TURNAROUND TIME :

Typical leadtime: 32 weeks