IC IRT Nanoelec/CEA-LETI Silicon Photonics 2 ML Si-220
TECHNOLOGY CHARACTERISTICS:
CEA-LETI Si-220 Passive Photonics platform
CEA-Leti’s Silicon photonics platform allows miniaturization, power efficiency, cost reduction and scalability of photonic integrated circuits (PIC).
Pioneering silicon photonics for more than 15 years, CEA-Leti has designed a technology toolbox featuring state-of-the-art performance for communication, computing and optical sensing.
CEA-Leti’s Silicon photonics platform offers a broad range of processes on 300 mm wafers that leverage world-class pre-industrialization equipment. CEA-Leti’s fabrication platform enables large-scale integration of passive and active devices in a flexible CMOS compatible process.
Main features:
300 mm high uniformity SOI substrate with 220 nm Si
Metal heater
One-level metal interconnect
Deep trench for edge coupler
Available option:
Open 3D Post-processes: UBM, Bumps & µ-Bumps
Device library including:
1D & 2D grating couplers
Waveguides (strip, rib, deep rib) with or without heater
Bend waveguides (90°, 45°, s-)
Transitions (singlemode to multimode)
Directional couplers (50%, 90%, 98%)
MMI (1x2, 2x2)
Racetrack resonator
Introduction to CEA-LETI silicion photonics platform:
APPLICATION AREA:
Communication: Telecom, Datacom, 5G infrastructures, quantum cryptography for cybersecurity
Computing: Computer communication for High Performance Computing (HPC), quantum computing and neuromorphic computing for AI
Optical sensing: Gas sensing, structural health monitoring and 3D sensing such as LIDAR
