MAD200 Memory Advanced Demonstrator 200mm

NVM IRT Nanoelec/LETI-CEA CMOS NVM Memory Advanced Demonstrator 200mm (MAD200)


In order to address new emerging Non Volatile Memory technologies and to develop an optimized memory stack that targets the client requests, CEA-LETI with CMP offers also a so-called Memory Advanced Demonstrator (MAD) Multi-Project Wafer based on 130 nm 200mm base wafers with 4 copper metal lines. The memory module, that can consist of OxRAM technology, is fabricated in the BEOL before pad level. This versatile test vehicle offers the possibility to have on the same silicon test structures spanning from simple resistors (1R), resistors with its selector transistor (1T1R), memory arrays (1kb cuts to 1Mb array) up to complex IC designs allowed by the routing placed on the 4 metal levels. All such structures are essential for a deep analysis of the memory functionality: from bulk material (with its interfaces) screening, obtained by the 1R and 1T1R; passing through statistical analysis of extrinsic bits, obtained by memory arrays; up to first validation of complex functions obtained by specific designs. MAD offers also a benchmark opportunity between different technologies (PCM, MRAM, CBRAM, ...) with the same test vehicle in order to extract benefits and drawback from each of them. MAD 200 diagram

Cross section courtesy of LETI-CEA


Advanced materials integration, 1T-1R from single bit to Mbit arrays, BEOL selectors, Innovative designs: Crossbar, Neuromorphic, TCAM, Memory point scaling down to 40nm.


Storage Class memory, Embedded memory, Neuromorphic, Computing, Artificial Intelligence accelerator.


10.9-10-Addon_NVM_H9A@2018.4.1 (May-19)

Frontend Backend tools :

Cadence IC (release aligned on ST HCMOS9A PDK)

Simulation tools :

Eldo (Mentor Graphics)

Verification tools :

Calibre (Mentor Graphics)

Parasitics extraction tools :

StarRCXT (Synopsys)


Typical leadtime: 24 weeks from MPW run deadling to packaged parts delivery