IC ON Semiconductor 0.35µm CMOS HV ONC35I3T25U

IC ON Semiconductor 0.35µm CMOS High Voltage 4 ML ONC35I3T25U

TECHNOLOGY CHARACTERISTICS :

Met. layer(s) : 4, thick top metal
Poly layer(s) : 2
Available I/O : I/O standard cell libraries for core and pad limited designs
Temp. range : -40°C/+155°C
Supply voltage : 3.3V/12V
Memory options

  • Synchronous high speed/high temp single port SRAM
  • Synchronous high speed/high temp dual port SRAM
  • Low power synchronous SRAM
  • Synchronous high speed/high temp diffusion ROM
  • Low power synchronous via programmable ROM
  • One-Time Programmable (OTP)
  • EEPROM (no additional masks or processing steps)

SPECIAL FEATURES :

  • High voltage devices up to 18V as well as digital and analog operation at 3.3V and 12V
  • floating low voltage diodes
  • medium voltage floating metal capacitors"

APPLICATION AREA :

Increased digital content in a mixed signal and/or high voltage environment

  • 3 and 5 metal layers options (thick top metal)
  • Additional options on request: HIPO, MiM capacitor, Epi

DESIGN KIT VERSION :

Cadence 5

Frontend Backend tools :

Synopsys Design Compiler and Cadence Verilog (for digital design) ; Cadence DFII (4.4.6) and Spectre (for analog design)

Simulation tools :

Spectre, Eldo and HSpice (analog simulation)

Verification tools :

Mentor Calibre

Parasitics extraction tools :

Calibre PEX

Place route tools :

Synopsys Apollo, Astro and Cadence Silicon Ensemble

LIBRARIES :

For standard cell :

  • ultra high density core shell
  • core cell level shifters

For standard I/O :

  • fat pad I/O library (for core limited designs)
  • tall pad I/O library (for pad limited designs)

TURNAROUND TIME :

Typical leadtime: TBD