IC 28nm CMOS28FDSOI

IC STMicroelectronics 28nm Advanced CMOS FDSOI 8 ML CMOS28FDSOI

TECHNOLOGY CHARACTERISTICS :

CMOS gate length: 28nm drawn poly length
Triple well Fully Depleted SOI devices, with ultrathin BOX and Ground Plane
Body biasing
Dual Vt MOS transistors (LVT, RVT)
Dual gate oxide (1.0V for core and 1.8V for IO)
Temperature range: -40°C to 175°C
Dual-damascene copper for interconnect, low-k dielectric
8 metal layers (8ML) for interconnect
2 thick Cu top metal (0.880 micron)
Low k inter-level dielectric
Fringe MoM capacitors
Inductors
Analog / RF capabilities
Various power supplies supported: 1.8V, 1.0V
Standard cell libraries (more than 3Mgates/mm2)
Embedded memory (Single port RAM / ROM / Dual Port RAM).

Introduction to FD-SOI video

DESIGN KIT VERSION :

1.0.a

Frontend Backend tools :

Cadence IC 6.1.7

Simulation tools :

Spectre (Cadence), Eldo (Mentor Graphics), Hspice (Synopsys), ADS Momentum (Keysight), GoldenGate (Keysight)

Verification tools :

Calibre (Mentor Graphics) PVS (Cadence)

Parasitics extraction tools :

StarRCXT (Synopsys), QRC (Cadence), Calibre xRC (Mentor Graphics)

Place route tools :

Innovus (Cadence), ICC (Synopsys)

LIBRARIES :

CORE cells Libraries:
- CORE: General purpose core cells
- CLOCK: Buffer cells for clock tree synthesis
- PR: Place and route filler cells

IO cells Libraries:
- 1.8V Digital IOs
- 1.0V, 1.8V, 3.3V Analog IOs
- Body Bias supply pads
- Bonding pads and Flip-Chip pads

On request:
- SHIFT: Level Shifters libraries
- CORI: Isolation cells
- CORR: Retention cells
- Compensation cells
- DLL, PLL
- ...

TURNAROUND TIME :

Typical leadtime: 24-32 weeks from MPW run deadline to packaged parts