IC 130nm BiCMOS9MW

IC STMicroelectronics 130nm BiCMOS SiGe 6 ML BiCMOS9MW

TECHNOLOGY CHARACTERISTICS :

CMOS Gate length: 130nm drawn, 130nm effective
Deep Nwell and Deep Trench Isolation
Double Vt transistor offering (Low Leakage , High Speed)
Dual gate oxide (1.2V for core and 2.5V for IO)
Threshold voltages (for 2 families above): VTN = 450/340mV, VTP = 395/300mV
Isat (for 2 families above): TN @ 1.2V: 535/670uA/mic
TP @ 1.2V: 240/310uA/mic
Bipolar SiGe transistors: High Speed NPN
Medium VoltageNPN
Typical beta (for 2 families above): 1000/1000
Typical Ft (for 2 families above): 230/150GHz
Power supply 1.2V
Temperature range: -40°C to 175°C 6 Cu metal layers
Low k inter-level dielectric
MIM capacitors
Standard cell libraries (more than 180kgates/mm2)
Embedded memory (Single port RAM / ROM / dual port RAM).

DESIGN KIT VERSION :

2.9.b

Frontend Backend tools :

Cadence IC 6.1.6

Simulation tools :

Spectre (Cadence), Eldo (Mentor Graphics), Hspice (Synopsys), ADS GoldenGate (Keysight)

Verification tools :

Calibre (Mentor Graphics) PVS (Cadence)

Parasitics extraction tools :

StarRCXT (Synopsys), QRC (Cadence)

Place route tools :

Innovus (Cadence), ICC (Synopsys)

LIBRARIES :

CORE cells Libraries:
 CORE: General purpose core libraries
 CORX: Complementary core libraries (complex gates)
 CLOCK: Buffer cells for clock tree synthesis
 PR: Place and route filler cells
IO cells Libraries:
 2.5V, 3.3V IO pads, Digital and Analog
 bonding pads and flip-chip pads.
On request:
 Level Shifters
 LVDS Pads
 DLL, PLL

TURNAROUND TIME :

Typical leadtime: 16-18 weeks from MPW run deadline to packaged parts