CMOS 0.35 C35B4M3
Same as C35B4C3 with Thick Metal module instead of Metal 4 module and with MIM capacitor module
Poly layer(s): 2, high resistive poly
Maximum die size: 2cm x 2cm
Usable cells: about 300 digital cells
Available I/O: I/O cell library with digital pads is available 3V, 3V/5V, 5V with internal level shifters
Temp. range: -40° C. / +125° C.
Supply voltage: 5V or 3.3V.
High performance analog/digital/RF process ?
Mixed signal analog digital, large digital designs, system on chip, RF.
Cadence IC 6.1.5 Cadence IC 5.1.41_USR6
Spectre, Hspice, Ultrasim, NC-Sim, ams-Designer (Cadence) Eldo, ModelSim, QuestaSim (Mentor Graphics) Hspice (Synopsys)
Assura, PVS (Cadence) Calibre (Mentor Graphics)
QRC (Cadence) Calibre xRC (Mentor Graphics)
Encounter Digital Implementation (EDI) (Cadence)
LV Digital standard cells and IO Libraries:
- CORELIB: General purpose digital library
- CORELIB_3B: Same as CORELIB with 3 busses (VDD, VSS, GND)
- IOLIB: IO pads (input, output, bidir). 3.3V and 5V available
- IOLIBC_3B: Core limited digital IO Libraries
- Core and IO cells are characterized for 1.8V, 2.2V, 2.7V, 3.3V.
Analog standard cells Libraries:
- IOLIB_ANA: Analog IO pads library
- IOLIBC_ANA_3B: Core limited Analog IO pads library
- IOLIB_ANA_HV: High Voltage Analog IO pads library
- A_CELLS: Analog Library RF standard IO cells Libraries:
- SPIRAL : Library with characterized Inductors
- RF_PADS : RF IO pads library
Typical leadtime: 10-12 weeks from MPW run deadline to packaged parts
In 2018 the ams runs faced unexpected lead times, these delivery delays will be resumed in 2019.