IC 0.35µm CMOS HV ONC35I3T25U

IC ON Semiconductor 0.35µm CMOS High Voltage 4 ML ONC35I3T25U

TECHNOLOGY CHARACTERISTICS :

Met. layer(s): 4, thick top metal
Poly layer(s) : 2
Available I/O : I/O standard cell libraries for core and pad limited designs
Temp. range : -40°C/+155°C
Supply voltage : 3.3V/12V
Memory options:
Synchronous high speed/high temp single port SRAM
Synchronous high speed/high temp dual port SRAM
Low power synchronous SRAM
Synchronous high speed/high temp diffusion ROM
Low power synchronous via programmable ROM
One-Time Programmable (OTP)
EEPROM (no additional masks or processing steps)

SPECIAL FEATURES :

High voltage devices up to 18V as well as digital and analog operation at 3.3V and 12V
floating low voltage diodes
medium voltage floating metal capacitors
Increased digital content in a mixed signal and/or high voltage environment.

APPLICATION AREA :

Calibre PEX

DESIGN KIT VERSION :

Synopsys Apollo, Astro and Cadence Silicon Ensemble

Frontend Backend tools :

For standard cell :

  • ultra high density core shell
  • core cell level shifters

For standard I/O :

  • fat pad I/O library (for core limited designs)
  • tall pad I/O library (for pad limited designs)

Simulation tools :

Typical leadtime: TBD

Place route tools :

STANDARD price in Euro/mm2
770
EP DISCOUNTED price in Euro/mm2
(applied to EUROPRACTICE MEMBERS registered)
720