IC 0.16µm BCD8s-SOI

IC STMicroelectronics 0.16µm BCD SOI High Voltage 4 ML BCD8s-SOI

TECHNOLOGY CHARACTERISTICS :

Temperature range: -40°C to +175°C
0.16µm Bipolar-CMOS-DMOS
4 Metal Levels with last Al Thick Power metal
Baseline 3.3V CMOS
Medium Voltage Module: 6V / 20V / 40V NMOS and PMOS
High Voltage Module: 70V / 100V / 140V / 200V NMOS and PMOS
Optional 2nd gate oxide for 1.8V CMOS
Dielectric Isolation on SOI
Available memory: OTP

DESIGN KIT VERSION :

2.1

Frontend Backend tools :

Cadence IC 6.1.7

Simulation tools :

Spectre (Cadence), Eldo (Mentor Graphics)

Verification tools :

Calibre (Mentor Graphics)

Parasitics extraction tools :

StarRCXT (Synopsys)

LIBRARIES :

Power devices (Power generator for specific needs available through CMP)
Standard cells (1.8V, 3.3V)
Pcells (bipolars, diodes, capacitors, resistors)
Macrocell ESD, Antifuse (optional).

TURNAROUND TIME :

Typical leadtime: 18-24 weeks from MPW run deadline to packaged parts