STMicroelectronics

IC 0.16µm BCD8s-SOI 

TECHNOLOGY CHARACHTERISTICS:

Temperature range: -40°C to +125°C
0.16µm Bipolar-CMOS-DMOS
4 Metal Levels with last Al Thick Power metal
Baseline 3.3V CMOS
Medium Voltage Module: 6V / 20V / 40V NMOS and PMOS
High Voltage Module: 70V / 100V / 140V / 200V NMOS and PMOS
Optional 2nd gate oxide for 1.8V CMOS
Dielectric Isolation on SOI
Available memory: OTP

DESIGN KIT VERSION:

2.1 (2017)

FRONTEND BACKEND TOOLS:

Cadence IC 6.1.7

SIMULATION TOOLS:

Spectre (Cadence), Eldo (Mentor Graphics)

VERIFICATION TOOLS:

Calibre (Mentor Graphics)

PARASITICS EXTRACTION TOOLS:

StarRCXT (Synopsys)

LIBRARIES:

Power devices (Power generator for specific needs available through CMP) Standard cells (1.8V, 3.3V) Pcells (bipolars, diodes, capacitors, resistors) Macrocell ESD, Antifuse (optional).

TURNAROUND TIME:

Typical leadtime: 18-24 weeks from MPW run deadline to packaged parts

PRICE

STANDARD price in Euro
2500/mm²
Area = X*Y including scribe-line.
Price for Area ≤ 5mm
² with minimum charge of 3.43mm² including scribe-line.
12500+[(Area-5) x 2200]/mm²
Price for 5mm² < Area < 15mm² including scribe-line. Contact CMP when Area is larger.

 EP DISCOUNT price in Euro/project
(applied to EUROPRACTICE MEMBERS registered)
1000.

CONTACT 


Support:

Estimate request:

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DOCUMENTATION

Technology Overview (Jan-17): pdf/bcd8s-soi_technology_overview-2.pdf