Process Catalog

JPEG - 159.3 kbCMP is a service organization in ICs and MEMS for prototyping and low volume productions.

  • CMP provides several regular and advanced CMOS technologies. BiCMOS RF, High voltage and Smart power are among our Specialty technology portfolio.
  • CMP provides two types of MEMS technologies for prototyping: Integrated bulk micromachining technologies and specific surface micromachining technologies.

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IC 28nm CMOS28FDSOI

STMicroelectronics
Advanced CMOS FDSOI technology with 8 metal layers

IC 55nm BiCMOS055

STMicroelectronics
BiCMOS SiGe technology with 8 metal layers

IC 65nm CMOS065

STMicroelectronics
Advanced CMOS technology with 7 metal layers

IC 130nm BiCMOS9MW

STMicroelectronics
BiCMOS SiGe technology with 6 metal layers

IC 130nm H9SOI-FEM

STMicroelectronics
Advanced CMOS SOI technology with 4 metal layers

IC 130nm HCMOS9GP

STMicroelectronics
CMOS technology with 6 metal layers

IC 130nm HCMOS9A

STMicroelectronics
CMOS High Voltage technology with 4 metal layers

IC 0.16µm BCD8sP

STMicroelectronics
BCD High Voltage technology with 4 metal layers

IC 0.16µm BCD8s-SOI

STMicroelectronics
BCD SOI High Voltage technology with 4 metal layers

IC 0.18µm aC18A6

ams
CMOS technology with 6 metal layers, for Power management applications MEMS and Sensor interfaces Other SOC applications in Medical, Automotive and Industrial High performance mixed analog/digital applications
Next run: 2018/05/09

IC 0.18µm aH18A6

ams
CMOS High Voltage technology with 6 metal layers, for Mixed signal analog digital, HV designs, system on chip
Next run: 2018/05/09

IC 0.35µm BARC C35B4OA

ams
CMOS Opto BARC technology with 4 metal layers, for Provides enhanced optical sensitivity for embedded photodiodes and high density CMOS camera products.
Next run: 2018/02/20

IC 0.35µm C35B4C3

ams
CMOS technology with 4 metal layers, for Mixed signal analog digital, large digital designs, system on chip
Next run: 2018/02/20

IC 0.35µm ARC C35B4O1

ams
CMOS Opto ARC technology with 4 metal layers, for Provides enhanced optical sensitivity for embedded photodiodes and high density CMOS camera products.
Next run: 2018/02/20

IC 0.35µm RF C35B4M3

ams
CMOS RF technology with 4 metal layers, for Mixed signal analog digital, large digital designs, system on chip, RF.
Next run: 2018/04/10

IC 0.35µm H35B4D3

ams
CMOS High Voltage technology with 4 metal layers, for Mixed signal analog digital, HV designs, system on chip
Next run: 2018/02/13

IC 0.35µm C35B4E3

ams
CMOS technology with 4 metal layers, for The process is fully compatible with C35B4C3 Mixed signal analog digital, large digital designs, system on chip

IC 0.35µm S35D4M5

ams
BiCMOS SiGe technology with 4 metal layers, for Mixed signal analog/RF/digital, large digital designs, system on chip
Next run: 2018/04/10

MEMS Specific MEMS technologies PolyMUMPs

MEMSCAP
MEMS MUMPS, for MEMS, micromechanics, MOEMS.
Next run: 2018/01/16

MEMS Specific MEMS technologies SOIMUMPs

MEMSCAP
MEMS MUMPS, for MEMS, micromechanics, MOEMS
Next run: 2018/03/06

MEMS Specific MEMS technologies PiezoMUMPs

MEMSCAP
MEMS PiezoMUMPS, for MEMS, micromechanics, MOEMS
Next run: 2018/01/30

MEMS Bulk Micromachining Frontside Bulk Micromachining

ams
CMOS FS Bulk Micromachining technology with 4 metal layers, for MEMS, micromechanics, MOEMS.

MEMS Bulk Micromachining Backside Bulk Micromachining

ams
CMOS BS Bulk Micromachining technology with 4 metal layers

MEMS TDSI MIDIS TM MIDIS

TELEDYNE DALSA
MEMS, for Accelerometers Gyroscopes Resonators Inertial sensor combos (Sensor fusion)
Next run: 2018/04/10

OPEN 3D Frontside UBM post-process

IRT Nanoelec/LETI-CEA
Wafer-level packaging, for Si-Si assembly

OPEN 3D Frontside Micro-Bumps post-process

IRT Nanoelec/LETI-CEA
Wafer-level packaging, for Si-Si assembly

OPEN 3D Frontside Bumps post-process

IRT Nanoelec/LETI-CEA
Wafer-level packaging, for Single die flip-chip, Si-Si assembly

OPEN 3D Backside post-process (TSV, RDL & Bumps)

IRT Nanoelec/LETI-CEA
Wafer-level packaging, for Single die flip-chip, Si-Si assembly

Passive Silicon Interposer with UBM

ams
Si-Interposer technology with 4 metal layers, for Passive Silicon Si-Interposer

ams 0.35 and 0.18 Wafer-level bumping

ams
Wafer-level packaging, for Single die flip-chip packaging

Silicon Photonic ICs Si310-PHMP2M

IRT Nanoelec/LETI-CEA
Si-Photonics technology with 2 metal layers, for Telecom, DataCom, ComputerCom
Next run: 2018/03/01

0.35µm Active Silicon Interposer with UBM

ams
Si-Interposer technology with 4 metal layers, for Active Silicon Si-Interposer