IC 130nm H9SOI-FEM

IC STMicroelectronics 130nm Advanced CMOS SOI 4 ML H9SOI-FEM

TECHNOLOGY CHARACTERISTICS :

Gate length: 130nm 200mm
SOI wafers with high resistive substrate 2.5V
Body Contacted CMOS & Floating Body CMOS 5.0V NLDMOS & PLDMOS 1.2V High Speed 130nm CMOSmeta
High Linearity MIM capacitor (2fF/mm2)
4 metal layer (thick upper Cu layer 4µ).

DESIGN KIT VERSION :

14.1

Frontend Backend tools :

Cadence IC 6.1.6 Cadence IC 5.1.41_USR6

Simulation tools :

Spectre (Cadence), Eldo (Mentor Graphics),ADS GoldenGate (Keysight)

Verification tools :

Calibre (Mentor Graphics) PVS (Cadence)

Parasitics extraction tools :

Calibre xRC (Mentor Graphics), QRC (Cadence)

LIBRARIES :

No library

TURNAROUND TIME :

Typical leadtime: 16-18 weeks from MPW run deadline to packaged parts